DocumentCode
3536867
Title
Negative-resistance characteristics of the micromachined thermistor sensor in CMOS-VLSI technology
Author
Lai, Zongsheng ; Sen, Bin ; Robison, A.M.
Author_Institution
Dept. of Electron. Sci. Technol., East China Normal Univ., Shanghai, China
fYear
1995
fDate
6-10 Nov 1995
Firstpage
375
Lastpage
378
Abstract
The experimental and theoretical analyses to explain the origin of the negative-resistance characteristics of the isothermal doped poly-Si resistor of the micromachined sensor are presented in this paper. Based on the effect of self-heating of the resistor with cavity structure on the transportation of carriers across the grain-boundary barrier, the computed simulation results fit well with the experimental values
Keywords
CMOS integrated circuits; VLSI; micromachining; microsensors; negative resistance devices; silicon; thermistors; CMOS-VLSI technology; Si; carrier transport; cavity structure; grain-boundary barrier; isothermal doped polysilicon resistor; micromachined thermistor sensor; negative resistance; self-heating; simulation; CMOS technology; Computational modeling; Gas detectors; Heating; Isothermal processes; Resistors; Sensor phenomena and characterization; Silicon; Thermal sensors; Thermistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN
0-7803-2624-5
Type
conf
DOI
10.1109/TENCON.1995.496418
Filename
496418
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