Studies on reducing leakage current of large-area silicon PIN microstrip sensors-methods to prevent implantation damage

Author

Tsay, Wen-Chin ; Yen Ann Chen ; Hong, Jyh-Wong ; Chen, A. ; Lin, Willis T. ; Chang, Y.H. ; Hou, S.R. ; Hsu, S.L. ; Li, C.R. ; Tin, Hsien-Jen ; Chian, Song-Tsang

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

fYear

1995

fDate

6-10 Nov 1995

Firstpage

383

Lastpage

386

Abstract

Several 8×4 cm² single-sided silicon microstrip sensors with capacitor coupling and polysilicon bias resistors have been fabricated by using planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process has been developed to replace the p⁺ strip implantation. Several anneal technologies have been studied to remove the implantation damge. The prototype sensors have been tested at the CERN SPS area. Test results showed that such a sensor is feasible

Keywords

annealing; ion implantation; leakage currents; microsensors; microstrip components; p-i-n diodes; silicon radiation detectors; Si; Sirtl etch analysis; annealing; boron solid source predeposition; capacitor coupling; implantation damage; large-area silicon PIN microstrip sensors; leakage current; planar technology; polysilicon bias resistors; single-sided sensors; Boron; Capacitive sensors; Capacitors; Etching; Leakage current; Microstrip; Resistors; Silicon; Solids; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496420

Filename

496420