Title :
A new type MOS-gated tunnel transistor with a Schottky barrier
Author :
Kimura, Mitsuteru
Author_Institution :
Fac. of Eng., Tohoku Gakuin Univ., Tagajo, Japan
Abstract :
A new type tunnel transistor, in which electrons can tunnel through the Schottky barrier between the Schottky metal and the accumulation layer formed at the interface by a MOS gate just on the Schottky junction to control the tunneling current, is proposed and demonstrated
Keywords :
MOSFET; Schottky barriers; accumulation layers; tunnel transistors; MOS-gated tunnel transistor; Schottky barrier; accumulation layer; Cathodes; Delay; Electrons; Impurities; MOSFETs; Schottky barriers; Schottky diodes; Semiconductor diodes; Threshold voltage; Tunneling;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496421
