• DocumentCode
    3536942
  • Title

    Characterization of flicker noise in YBa2Cu3O 7-δ bicrystal junctions in weak magnetic fields

  • Author

    Surya, Charles ; Israeloff, N.E. ; Seed ; Vittoria

  • Author_Institution
    Dept. of Electron. Eng., Hong Kong Polytech. Univ., Hong Kong
  • fYear
    1995
  • fDate
    6-10 Nov 1995
  • Firstpage
    399
  • Lastpage
    403
  • Abstract
    Flicker noise in c-axis oriented long YBCO bicrystal grain boundary junctions was characterized as a function of temperature, biasing conditions and magnetic field applied perpendicular to the a-b plane over a wide range of temperatures from 15 K to over 70 K. Aperiodic variations, as a function of magnetic field, were observed in both the junction voltages, VJ, and the flicker noise magnitude under constant current bias as the magnetic field was scanned from 0-8 G. The noise magnitudes were found to peak at the minima of V J. Analyses of the field dependencies of the magnitudes and the functional form of the voltage noise power spectra show that the noise did not arise from thermally activated flux motion. Based on the dependencies of the noise power spectra on the bias current and the dynamic resistance of the junction we conclude that the noise originates from the fluctuations of the critical current of the devices most likely due to trapping of carriers or defect motion within the grain boundary
  • Keywords
    barium compounds; bicrystals; flicker noise; fluctuations in superconductors; grain boundaries; high-temperature superconductors; yttrium compounds; 0 to 8 G; 15 to 80 K; YBCO bicrystal grain boundary junction; YBa2Cu3O7-δ; YBa2Cu3O7; carrier trapping; critical current fluctuations; defect motion; dynamic resistance; flicker noise; magnetic field; voltage noise power spectra; 1f noise; Fluctuations; Grain boundaries; Magnetic analysis; Magnetic fields; Magnetic noise; Motion analysis; Temperature distribution; Voltage; Yttrium barium copper oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
  • Print_ISBN
    0-7803-2624-5
  • Type

    conf

  • DOI
    10.1109/TENCON.1995.496424
  • Filename
    496424