Title :
Observation of solid phase epitaxial growth of amorphous SiGe on Si(100) substrate
Author :
Qi, W.J. ; Li, B.Z. ; Jiang, G.B. ; Gu, Z.G. ; Kwok, T.K. ; Zhang, R.J. ; Chu, P.K.
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
The solid phase hetero-epitaxial growth of amorphous SiGe on Si(100) substrate has been investigated in this paper. The experimental results indicate that the solid phase epitaxy of the heterostructure Si 1-xGex/Si can be achieved with different compositions through high temperature thermal processes such as boron diffusion, annealing and oxidation
Keywords :
Ge-Si alloys; amorphous semiconductors; annealing; diffusion; oxidation; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; solid phase epitaxial growth; Si(100) substrate; Si1-xGex/Si heterostructure; SiGe-Si; amorphous SiGe; annealing; boron diffusion; high temperature thermal processes; oxidation; solid phase epitaxial growth; Amorphous materials; Annealing; Boron; Epitaxial growth; Germanium silicon alloys; Oxidation; Silicon germanium; Solids; Substrates; Temperature;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496425
