Atmospheric pressure CVD-grown SiGe base HBT with the highest value of current gain-Early voltage product

Author

Han, T.-H. ; Cho, D.H. ; Lee, S.-M. ; Ryum, B.R.

Author_Institution

High Speed Devices Sect., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

1995

fDate

6-10 Nov 1995

Firstpage

408

Lastpage

411

Abstract

A low thermal-budget SiGe base heterojunction bipolar transistor (HBT) with a record current gain-Early voltage product (β·Va) has been fabricated using atmospheric pressure (AP) CVD. After growing the SiGe layer on the wafer patterned by local oxidation of silicon (LOCOS), the HBT received thermal annealing only one time for drive-in and activation of arsenic (As) dopant in the polysilicon-emitter. For the 1×4 μm² emitter, typical value of β·Va is 200,000 V (β=2,000 and Va=100 V) at the collector current of 0.9 mA

Keywords

Ge-Si alloys; annealing; heterojunction bipolar transistors; semiconductor growth; semiconductor materials; vapour phase epitaxial growth; 0.9 mA; 100 V; APCVD-grown HBT; As dopant; LOCOS; SiGe base HBT; SiGe-Si:As; VPE growth; atmospheric pressure CVD; current gain-Early voltage product; heterojunction bipolar transistor; polysilicon emitter; thermal annealing; Bipolar transistors; Boron; Contact resistance; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Ion implantation; Silicon germanium; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496426

Filename

496426