Title :
Simulation of Ge implanted SiGe-channel p-MOSFETs
Author :
Niu, Guo-fu ; Ruan, Gang
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
This paper describes the process feasibility analysis and numerical simulation of Ge implanted SiGe-channel p-MOSFETs. The average separation between conducting holes and SiO2-Si interface peaks at certain effective implantation range, implies an optimum mask thickness. Threshold voltage is shown to increase with increasing Ge dose and decreasing effective projected range
Keywords :
Ge-Si alloys; MOSFET; ion implantation; semiconductor device models; semiconductor materials; semiconductor process modelling; Ge dose; Ge implanted SiGe-channel; PMOSFET; SiGe; SiO2-Si; numerical simulation; optimum mask thickness; p-MOSFETs; p-channel devices; process feasibility analysis; threshold voltage; Bipolar transistors; Circuit simulation; Degradation; Doping; Fabrication; Germanium silicon alloys; MOSFET circuits; Performance analysis; Silicon germanium; Threshold voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496427
