A Novel CMOS Power Amplifier for UWB Application

The design of a 3.0-7.9 GHz CMOS Power Amplifier (PA) for Group 1~3 MB-OFDM UWB applications in TSMC 0.18-μm CMOS technology is presented in this paper. The UWB PA proposed in this paper uses a cascode structure to ensure reasonable gain and high power efficiency, and a simple CS topology at the second stage is used to attain maximum output power. The measurement results indicated that the input return loss (S11) is less than-2 dB, output return loss (S22) is less than-6.6 dB, and average gain (S21) is approximately 18.8 dB over the frequency range of 3 to 7.9 GHz. It is very useful for low band UWB transmitter implementation especially for mobile or portable devices using UWB system.