Title :
Analysis of non-punch through trench emitter insulated gate bipolar transistor (IGBT)
Author :
Sabesan, L. ; Mawby, P ; Towers, M. ; Board, K. ; Waind, P.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
Abstract :
The modelling of steady-state characteristics in a trench emitter IGBT structure is presented. The semiconductor equations were solved in two dimensions with physical effects such as carrier-carrier scattering mobility, SRH and Auger recombination included. The I-V characteristics, internal characteristics forward voltage drop and latch-up characteristics have been investigated. Comparison between simulation and measurement have shown a good agreement
Keywords :
Auger effect; carrier density; carrier lifetime; carrier mobility; electron-hole recombination; insulated gate bipolar transistors; semiconductor device models; Auger recombination; I-V characteristics; carrier-carrier scattering mobility; forward voltage drop; insulated gate bipolar transistor; latchup characteristics; modelling; nonpunchthrough trench emitter IGBT; semiconductor equations; steady-state characteristics; Charge carrier processes; Insulated gate bipolar transistors; Integral equations; Newton method; Nonlinear equations; Poisson equations; Poles and towers; Radiative recombination; Steady-state; Voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496429
