Analysis of non-punch through trench emitter insulated gate bipolar transistor (IGBT)

Author

Sabesan, L. ; Mawby, P ; Towers, M. ; Board, K. ; Waind, P.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK

fYear

1995

fDate

6-10 Nov 1995

Firstpage

420

Lastpage

423

Abstract

The modelling of steady-state characteristics in a trench emitter IGBT structure is presented. The semiconductor equations were solved in two dimensions with physical effects such as carrier-carrier scattering mobility, SRH and Auger recombination included. The I-V characteristics, internal characteristics forward voltage drop and latch-up characteristics have been investigated. Comparison between simulation and measurement have shown a good agreement

Keywords

Auger effect; carrier density; carrier lifetime; carrier mobility; electron-hole recombination; insulated gate bipolar transistors; semiconductor device models; Auger recombination; I-V characteristics; carrier-carrier scattering mobility; forward voltage drop; insulated gate bipolar transistor; latchup characteristics; modelling; nonpunchthrough trench emitter IGBT; semiconductor equations; steady-state characteristics; Charge carrier processes; Insulated gate bipolar transistors; Integral equations; Newton method; Nonlinear equations; Poisson equations; Poles and towers; Radiative recombination; Steady-state; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496429

Filename

496429