Title :
An improved simulation model for power MOSFET
Author :
Zhou, Baoxia ; Zhiming Chen ; Wang, Shoujue
Author_Institution :
Dept. of Autom. Eng., Xian Univ. of Technol., China
Abstract :
A new model is proposed to make a more precise simulation of a power MOSFET using PSPICE. The application results for all types of HEXFET devices have a good agreement with the corresponding curves in the IR databook. A method of parameter extraction and some simulation results are presented for a demonstration HEXFET device
Keywords :
SPICE; equivalent circuits; power MOSFET; semiconductor device models; HEXFET devices; PSPICE; parameter extraction; power MOSFET; simulation model; Capacitance; Circuit simulation; Diodes; MOS capacitors; MOSFET circuits; Power MOSFET; Power electronics; Power system modeling; SPICE; Voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496433
