DocumentCode
3537039
Title
A new hybrid SOI LDMOS-IGBT power transistor
Author
Zeng, J. ; Mawby, P.A. ; Towers, M.S. ; Board, K.
Author_Institution
Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
fYear
1995
fDate
6-10 Nov 1995
Firstpage
440
Lastpage
443
Abstract
A new hybrid LDMOS-IGBT structure using SOI film is reported. The new device integrates the advantages of SOI technology, the conductivity modulation of IGBT and the high switching speed of DMOSFET
Keywords
electric breakdown; insulated gate bipolar transistors; power transistors; semiconductor device models; silicon-on-insulator; temperature distribution; thermal analysis; SOI film; Si; conductivity modulation; high switching speed; hybrid SOI LDMOS-IGBT; power transistor; self-heating; Anodes; Buffer layers; Cathodes; Insulated gate bipolar transistors; Power transistors; Semiconductor films; Silicon on insulator technology; Substrates; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN
0-7803-2624-5
Type
conf
DOI
10.1109/TENCON.1995.496434
Filename
496434
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