Title :
A new hybrid SOI LDMOS-IGBT power transistor
Author :
Zeng, J. ; Mawby, P.A. ; Towers, M.S. ; Board, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
Abstract :
A new hybrid LDMOS-IGBT structure using SOI film is reported. The new device integrates the advantages of SOI technology, the conductivity modulation of IGBT and the high switching speed of DMOSFET
Keywords :
electric breakdown; insulated gate bipolar transistors; power transistors; semiconductor device models; silicon-on-insulator; temperature distribution; thermal analysis; SOI film; Si; conductivity modulation; high switching speed; hybrid SOI LDMOS-IGBT; power transistor; self-heating; Anodes; Buffer layers; Cathodes; Insulated gate bipolar transistors; Power transistors; Semiconductor films; Silicon on insulator technology; Substrates; Thermal conductivity; Voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496434
