Title :
A comparative analysis of the behavior and of the switching losses for a group of ZCS-PWM converters using IGBT´s
Author :
Fuentes, R.C. ; Hey, H.L.
Author_Institution :
Fed. Univ. of Santa Maria, Brazil
Abstract :
The aim of this paper is to provide a comparative analysis of the off behavior and of the loss mechanisms of a group of zero-current switching PWM boost power converters, using IGBTs as their power switches. It also includes one improved topology developed by the authors, increasing the understanding of the benefits and drawbacks of them. Experimental results, including the measured efficiencies, for each soft-switching boost power converter operating at 40 kHz, rated at 155 V input voltage and 1.1 kW output power are provided and compared with that of the hard-switching boost power converter
Keywords :
DC-DC power convertors; PWM power convertors; bipolar transistor switches; insulated gate bipolar transistors; losses; power bipolar transistors; power semiconductor switches; switching circuits; 1.1 kW; 155 V; 40 kHz; PWM boost power converters; ZCS; conversion efficiency; loss mechanisms; off behavior; power IGBT switches; soft switching; topology improvement; zero current switching; Insulated gate bipolar transistors; Power generation; Power measurement; Pulse width modulation; Pulse width modulation converters; Switching converters; Switching loss; Topology; Voltage; Zero current switching;
Conference_Titel :
Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE
Conference_Location :
St. Louis, MO
Print_ISBN :
0-7803-3840-5
DOI :
10.1109/PESC.1997.616842
