DocumentCode :
3537087
Title :
An EPROM cell with a magnesium electronic injector
Author :
Kong, Sik On ; Kwok, Chee Yee ; Wong, Sai Peng
Author_Institution :
Dept. of Electr. & Electron. Eng., Auckland Univ., New Zealand
fYear :
1995
fDate :
6-10 Nov 1995
Firstpage :
456
Lastpage :
459
Abstract :
By using Mg as the tunnelling electrode for an EPROM cell, it is shown in a control experiment that the tunnelling current is much enhanced while the tunnelling field is much reduced after a sintering procedure in which Mg reacts with the SiO2 dielectric. Potentially, this may lead to faster programming, lower programming voltages and better programming endurance. An experimental EPROM cell has been made and has demonstrated programmability
Keywords :
EPROM; MOS memory circuits; magnesium; sintering; tunnelling; EPROM cell; Mg-SiO2; SiO2 dielectric; magnesium electronic injector; programmability; sintering; tunnelling electrode; Cathodes; Crystalline materials; Current density; EPROM; Electrodes; Electrons; Magnesium; Silicon; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
Type :
conf
DOI :
10.1109/TENCON.1995.496438
Filename :
496438
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3537087
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