Title :
Characterization of split-gate flash memory devices: reliability, gate-disturbance and capacitive coupling coefficients
Author :
Kim, D.M. ; Jun, Y. ; Sohn, Y.S. ; Kim, J.W. ; Choi, I.
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea
Abstract :
The split-gate flash memory device is characterized. The oxide breakdown due to cumulative electron tunneling, viz. repeated erasure is investigated with the use of current injection experiments. The results are correlated with the observed device cycling behaviour. Also data for the gate disturbance, programming efficiency and capacitive coupling coefficients are presented and discussed
Keywords :
EPROM; MOS memory circuits; integrated circuit reliability; tunnelling; capacitive coupling coefficients; current injection; cycling; electron tunneling; erasure; gate disturbance; oxide breakdown; programming efficiency; reliability; split-gate flash memory devices; Cathodes; Degradation; Electric breakdown; Electron traps; Electronics industry; Flash memory; Laboratories; Split gate flash memory cells; Stress; Tunneling;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496439
