Title :
Sensors of magnetic field based on magnetoresistive effect
Author :
Sadovskov, I.D. ; Zaharov, A.A.
Author_Institution :
Saratov State Tech. Univ., Saratov, Russia
Abstract :
This article describes sensors of magnetic field based on magnetoresistive effect. Learning magnetoresistive effect is actually scientific research work now. Magnetoresistive sensors on ferromagnetic structures are divided into Anisotropic Magnetoresistor (AMR), Giant Magnetoresistor (GMR), Spin-Dependent Tunneling (SDT) Magnetoresistor. Using GMR and SDT sensors perspective to create highly sensitive and integrated measuring electronic devices.
Keywords :
ferromagnetic materials; giant magnetoresistance; magnetic field measurement; magnetic sensors; magnetoresistive devices; AMR sensor; GMR sensor; SDT sensor; anisotropic magnetoresistor; ferromagnetic structures; giant magnetoresistor; integrated measuring electronic devices; magnetic field sensor; magnetoresistive effect; spin dependent tunneling; Magnetic sensors;
Conference_Titel :
Actual Problems of Electron Devices Engineering (APEDE), 2012 International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4673-2096-2
DOI :
10.1109/APEDE.2012.6478090
