Title :
Magnetic and electric transport properties in Fe3O4 thin films and nanowires
Author :
Li, Hongliang ; Wu, Yihong ; Teo, Kic Leong ; Guo, Zaibing ; Wang, Shijie ; Veres, Teodor
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
The transport properties of both epitaxial Fe3O4 thin films and nanowires grown on α-Al2O3 (0001) substrates using molecular beam epitaxy were investigated. The latter allows one to confine the APBs or tunnel junctions in a one-dimensional nanowire, which reduces substantially the number of boundaries, or junctions. The bias-dependence of conductance and magnetoresistance suggests that the electron transport of Fe3O4 nanowires is well represented by a series of tunnel junctions.
Keywords :
electrical conductivity; ferromagnetic materials; iron compounds; magnetic epitaxial layers; nanowires; tunnelling magnetoresistance; Al2O3; Fe3O4; bias-dependence conductance; electric transport properties; epitaxial thin films; magnetic properties; magnetoresistance; molecular beam epitaxy; one-dimensional nanowires; tunnel junctions; Electric resistance; Equations; Iron; Magnetic films; Magnetic properties; Nanowires; Temperature dependence; Temperature distribution; Transistors; Voltage;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1464158
