• DocumentCode
    3537674
  • Title

    Luminescence properties of defects in P+- or B+ -implanted thermally grown silicon dioxide

  • Author

    Seol, K.S. ; Ieki, A. ; Ohki, Y. ; Nishikawa, H. ; Takiyama, M.

  • Author_Institution
    Dept. of Electr. Eng., Waseda Univ., Tokyo, Japan
  • fYear
    1995
  • fDate
    17-20 Sep 1995
  • Firstpage
    85
  • Lastpage
    88
  • Abstract
    In this paper, we report photoluminescence spectra from P+ - or B+-implanted thermally grown SiO2 films obtained by synchrotron radiation and an excimer laser, and discuss the nature of the defects induced by the ion implantation
  • Keywords
    boron; insulating thin films; ion implantation; phosphorus; photoluminescence; silicon compounds; SiO2:B; SiO2:P; defects; excimer laser; ion implantation; luminescence; photoluminescence spectra; synchrotron radiation; thermally grown silicon dioxide films; Acceleration; Equations; Impurities; Kinetic theory; Laser excitation; Luminescence; Silicon; Synchrotron radiation; Temperature measurement; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulating Materials, 1995. International Symposium on
  • Conference_Location
    Tokyo
  • Print_ISBN
    4-88686-047-8
  • Type

    conf

  • DOI
    10.1109/ISEIM.1995.496514
  • Filename
    496514
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3537674