DocumentCode :
3537674
Title :
Luminescence properties of defects in P+- or B+ -implanted thermally grown silicon dioxide
Author :
Seol, K.S. ; Ieki, A. ; Ohki, Y. ; Nishikawa, H. ; Takiyama, M.
Author_Institution :
Dept. of Electr. Eng., Waseda Univ., Tokyo, Japan
fYear :
1995
fDate :
17-20 Sep 1995
Firstpage :
85
Lastpage :
88
Abstract :
In this paper, we report photoluminescence spectra from P+ - or B+-implanted thermally grown SiO2 films obtained by synchrotron radiation and an excimer laser, and discuss the nature of the defects induced by the ion implantation
Keywords :
boron; insulating thin films; ion implantation; phosphorus; photoluminescence; silicon compounds; SiO2:B; SiO2:P; defects; excimer laser; ion implantation; luminescence; photoluminescence spectra; synchrotron radiation; thermally grown silicon dioxide films; Acceleration; Equations; Impurities; Kinetic theory; Laser excitation; Luminescence; Silicon; Synchrotron radiation; Temperature measurement; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulating Materials, 1995. International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
4-88686-047-8
Type :
conf
DOI :
10.1109/ISEIM.1995.496514
Filename :
496514
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3537674
بازگشت