Title :
Electrical conduction and breakdown in amorphous tantalum and niobium oxide films
Author_Institution :
Herzen State Pedagogical Univ., St. Petersburg, Russia
Abstract :
The paper presents the results of investigating the electronic conduction and destruction of amorphous tantalum and niobium oxides (a-Ta2O5, a-Nb2O5) in thin anodic layers on metal surfaces in strong electric fields. It is shown that the breakdown of a highly homogeneous oxide dielectric is preceded by storage processes (dielectric aging)
Keywords :
ageing; amorphous state; anodised layers; dielectric thin films; electric breakdown; electrical conductivity; insulating thin films; niobium compounds; tantalum compounds; Nb2O5; Ta2O5; amorphous Nb2O5 films; amorphous Ta2O5 films; breakdown; dielectric aging; electronic conduction; highly homogeneous oxide dielectric; metal surfaces; storage processes; strong electric fields; thin anodic layers; Amorphous materials; Charge carriers; Conductive films; Conductivity; Electric breakdown; Frequency; Niobium; Resonance; Temperature dependence; Temperature distribution;
Conference_Titel :
Electrical Insulating Materials, 1995. International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
4-88686-047-8
DOI :
10.1109/ISEIM.1995.496517
