Third-Order Intermodulation of an MEMS Clamped-Clamped Beam Capacitive Power Sensor Based on GaAs Technology

Author

Juzheng Han ; Xiaoping Liao

Author_Institution

Key Lab. of MEMS, Southeast Univ., Nanjing, China

Volume

15

Issue

7

fYear

2015

fDate

Jul-15

Firstpage

3645

Lastpage

3646

Abstract

This letter presents a comprehensive theoretical and experimental study of the third-order intermodulation (IM3) in a microelectromechanical system capacitive power sensor with clamped-clamped beam at X-band. A simple model is developed to analyze the origin of IM3. High linearity of the sensor is demonstrated by dual-tone signal measurements both in frequency interval (Δf ) dependence and input power dependence. The worst IM3 product for different A f remains less than -39 dBm at an input of P₁ = P₂ = 6 dBm. Third-order intercept points of 29.3 dBm at Δf = 100 Hz and 33.2 dBm at Δf = 10 kHz are derived by measurements.

Keywords

III-V semiconductors; capacitive sensors; gallium arsenide; intermodulation distortion; microsensors; power semiconductor devices; GaAs; GaAs technology; MEMS clamped-clamped beam capacitive power sensor; dual-tone signal measurements; frequency interval dependence; input power dependence; microelectromechanical system; third-order intermodulation; Capacitive sensors; Distortion measurement; Frequency measurement; Micromechanical devices; Power measurement; Radio frequency; Intermodulation distortion; capacitive power sensor; microelectromechanical systems (MEMS);

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2015.2424997

Filename

7090944