Domain wall device of Permalloy submicron half-ring in series wire

The submicron Permalloy half-ring in series wire were fabricated. This was used to indicate different magnetic states by domain. Different magnitude longitudinal external fields were applied to the wire. The numbers of jump in the loop of magnetoresistances (MR) were different and might be the function of the maximum external field. The pattern structures of magnetic wires were fabricated by electron-beam lithography. Permalloy (Ni₈₀Fe₂₀) film was deposited by DC magnetron sputtering. MR measurement was made by standard 4-probe technique on two gold pads at 77 K and 300 K. Magnetic field was applied in the substrate plane. Longitudinal magnetoresistance were measured with different maximum field. From the measurements, jumps in the MR loops were observed which were attributed to domain wall depinning at the intersection of two half-ring or the domain walls were driven out of the half-ring wire.