Title :
30 nm-scale-fabrication of magnetic tunnel junctions using electron beam assisted CVD hard masks
Author :
Isogami, S. ; Tsunoda, M. ; Takahashi, M.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Abstract :
The electron beam (EB) assisted CVD carbon hard mask method, instead of focused ion beam (FIB) was demonstrated. Deposited carbon pillar could be used as a mask for Ar ion milling and also via a contact to top electrode. The carbon pillar deposition with minimum size of 30 nm width under the well optimized condition was accomplished. After CVD of carbon pillar, micro-fabrication process was applied and the magnetoresistance measurement for each magnetic tunnel junction (MTJ) was examined.
Keywords :
chemical vapour deposition; electron beam deposition; nanostructured materials; nanotechnology; tunnelling magnetoresistance; 30 nm; 30 nm-scale-fabrication; Ar ion milling; C; Ta-CuO-Ta-NiFe-Cu-Mn75Ir25-Co70Fe30-AlN-Co70Fe30-NiFe-T a; carbon pillar; electron beam assisted CVD carbon hard masks; focused ion beam; magnetic tunnel junctions; magnetoresistance; microfabrication; top electrode; Argon; Chemical elements; Electrodes; Electron beams; Lithography; Magnetic tunneling; Milling; Pollution measurement; Sputtering; Tunneling magnetoresistance;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1464196
