DocumentCode :
3538146
Title :
Electrical magnetization reversal in ferromagnetic semiconductors
Author :
Ohno, H. ; Yamanouchi, Masato ; Chiba, D. ; Matsukura, F.
Author_Institution :
Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
1567
Lastpage :
1568
Abstract :
The electrical current driven domain wall motion in a lithographically defined area of ferromagnetic semiconductor structures consisting of Ga0.95Mn0.05As/In0.15Ga0.85As/GaAs/GaAs(001) substrate was demonstrated in this study using magneto-optical Kerr effect (MOKE) microscope. The results of current induced magnetization reversal in magnetic tunnel junction (MTJ) nanopillars made of ferromagnetic III-V semiconductors were also investigated.
Keywords :
III-V semiconductors; Kerr magneto-optical effect; ferromagnetic materials; gallium arsenide; gallium compounds; magnetic domain walls; magnetic semiconductors; magnetic tunnelling; magnetisation reversal; nanostructured materials; Ga0.95Mn0.05As-In0.15Ga0.85As-GaAs; GaAs; MOKE; electrical current driven domain wall motion; electrical magnetization reversal; ferromagnetic III-V semiconductors; magnetic tunnel junction nanopillars; magneto-optical Kerr effect; Coercive force; Gallium arsenide; Magnetic domain walls; Magnetic domains; Magnetic field measurement; Magnetic fields; Magnetic tunneling; Magnetization reversal; Magnetoelectronics; Pulse measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464217
Filename :
1464217
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3538146
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