DocumentCode :
3538157
Title :
Injection of charge carriers and space charge build-up in fluoropolymer dielectrics
Author :
Wu, Z. Leo ; Raju, G. R Govinda
Author_Institution :
Dept. of Electr. Eng., Windsor Univ., Ont., Canada
fYear :
1995
fDate :
17-20 Sep 1995
Firstpage :
251
Lastpage :
254
Abstract :
This study concerns the injection of charge carriers and space charge build-up in fluoropolymer films by the thermally stimulated discharge (TSD) current method. Poling fields ranging from 2.5 to 20 MV m-1 are employed with the heating rates of 0.5-2 K min-1 over the temperature range of 0-200°C for TSD experiments. Silver and aluminum electrodes are employed to study the role of the cathode in the injection mechanism. The TSD currents are observed to depend on the cathode material. The magnitude of current peak and the total charge released to the external circuit with both electrode materials show a saturating trend with the poling field. This observation is consistent with the suggested mechanism of charge injection from electrodes and the space charge build up in the material. Relaxation times in the range of 4-6000 s are observed over the temperature range. Mechanisms of space charge build-up are also discussed
Keywords :
dielectric thin films; organic insulating materials; polymer blends; polymer films; space charge; thermally stimulated currents; 0 to 200 C; Ag; Ag electrodes; Al; Al electrodes; TSD current method; TSD currents; cathode material; charge carrier injection; fluoropolymer dielectrics; fluoropolymer films; injection mechanism; poling fields; relaxation times; space charge build-up; thermally stimulated discharge current method; Aluminum; Cathodes; Charge carriers; Circuits; Dielectrics; Electrodes; Heating; Silver; Space charge; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulating Materials, 1995. International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
4-88686-047-8
Type :
conf
DOI :
10.1109/ISEIM.1995.496556
Filename :
496556
Link To Document :
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