Title :
Trap-controlled and hopping modes of transport and recombination: similarities and differences
Author_Institution :
Moscow Eng. Phys. Inst., Russia
Abstract :
Analytic models are considered for trap-controlled and hopping carrier transport and recombination in disordered materials for both equilibrium and non-equilibrium (dispersive) regimes. It is shown that practically all characteristics of trap-controlled and hopping transport and recombination are similar at sufficiently high temperatures and for sufficiently long times. Experimental conditions which allow one to distinguish between different modes of carrier transport and recombination for a particular material are discussed
Keywords :
dielectric materials; electron traps; electron-hole recombination; hole traps; hopping conduction; localised states; master equation; carrier recombination; disordered dielectric; disordered materials; dispersive regime; equilibrium regime; high temperature; hopping transport; localized states; multiple trapping model; nonequilibrium regime; trap-controlled carrier transport; Conductivity; Dielectrics; Dispersion; Equations; Kinetic theory; Microscopy; Physics; Pulse generation; Temperature dependence; Tunneling;
Conference_Titel :
Electrical Insulating Materials, 1995. International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
4-88686-047-8
DOI :
10.1109/ISEIM.1995.496561
