Title :
Evaluation of TCNQ LB films on aluminum thin films by ATR measurement
Author :
Aoki, Yusuke ; Honda, Syosaku ; Wakamatsu, Takashi ; Kato, Keizo ; Kaneko, Futao
Author_Institution :
Dept. of Electr. & Electron. Eng., Niigata Univ., Japan
Abstract :
The attenuated total reflection (ATR) properties were measured for C15TCNQ Langmuir-Blodgett (LB) ultrathin films on Al thin films deposited using two types of processes. The dielectric constants were theoretically calculated from the ATR curves. It was estimated that Z-type LB films were well deposited in the first process. On the contrary, in the second process, it was estimated that the LB films were not perfectly deposited as Y-type, but partially as Z-type
Keywords :
Langmuir-Blodgett films; aluminium; organic compounds; permittivity; reflectivity; Al; Langmuir-Blodgett ultrathin films; TCNQ; Y-type structure; Z-type structure; aluminum thin films; attenuated total reflection; dielectric constants; Aluminum; Assembly; Electric variables measurement; Laser beams; Nonhomogeneous media; Optical films; Polarization; Solids; Substrates; Transistors;
Conference_Titel :
Electrical Insulating Materials, 1995. International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
4-88686-047-8
DOI :
10.1109/ISEIM.1995.496576
