DocumentCode :
3538398
Title :
Temperature and photoirradiation dependence of electrostatic phenomena at metal/polyimide LB film interface
Author :
Itoh, Eiji ; Niwa, Yuji ; Iwamoto, Mitsumasa
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fYear :
1995
fDate :
17-20 Sep 1995
Firstpage :
339
Lastpage :
342
Abstract :
Surface potentials of heat-treated PI LB films deposited on Au, Cr, Al and ITO electrodes were measured in a dark vacuum vessel at various temperatures before and after photoirradiation. The surface potential saturated when the number of deposited layers was several tens. The saturated surface potential was a linear function of the work function of electrodes at temperatures between -100°C and 150°C before photoirradiation, and at room temperature after photoirradiation. It was suggested that excess charges were transferred from electrodes into PI LB films until thermodynamic equilibrium was established at the interface. We also measured the surface potential of four kinds of PI LB films. The potential of polyimide with electron acceptors changed negatively, and the potential of polyimide with electron donors changed positively as the temperature increased. In contrast, the potential of polyimide with electron acceptors changed positively, and the potential of polyimide with electron donors changed negatively with photoirradiation
Keywords :
Langmuir-Blodgett films; metal-insulator boundaries; polymer films; surface potential; -100 to 150 C; Al; Au; Cr; ITO; InSnO; charge transfer; electron acceptors; electron donors; electrostatic phenomena; heat-treated PI; metal/polyimide LB film interface; photoirradiation dependence; surface potential; temperature dependence; thermodynamic equilibrium; work function; Chemicals; Chromium; Electrodes; Electrons; Electrostatic measurements; Gold; Metal-insulator structures; Polyimides; Temperature dependence; Thermodynamics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulating Materials, 1995. International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
4-88686-047-8
Type :
conf
DOI :
10.1109/ISEIM.1995.496578
Filename :
496578
Link To Document :
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