• DocumentCode
    3538689
  • Title

    Ferromagnetic and dielectric behavior of Mn doped BaCoO3

  • Author

    Inoue, T. ; Matsui, T. ; Fujimura, N. ; Morii, K.

  • Author_Institution
    Grad. Sch. of Eng., Osaka Prefecture Univ., Japan
  • fYear
    2005
  • fDate
    4-8 April 2005
  • Firstpage
    1677
  • Lastpage
    1678
  • Abstract
    The structural, magnetic and electric properties of calcinated BaCo1-xMnxO3 (x = 0.0-0.25) oxides are investigated by X-ray diffraction (XRD) and transmission electron microscopy, SQUID measurements, and conventional four-probe technique, respectively. XRD data show a 2H-type perovskite at x = 0.0, 10H-type crystal structure at x = 0.15, and mixed phases (2H- and 10H-types) at x = 0.05 and 0.10. The magnetisation-temperature curves reveal the antiferromagnetic phase of the 2H single phase and ferromagnetic behavior (brought by the observed hysteresis and remanent magnetization) at 5 K of the 10H-type structure. A transition from ferromagnetic to paramagnetic state is also observed with a transition temperature of around 47 K. Around this temperature region, specifically at 50 K, a semiconductor-insulator transition is found with a dielectric constant ε = 1.13. These results suggest that the 10H-type structure around the obtained transition temperature is a possible candidate for device applications of ferromagnetic oxides with dielectric properties.
  • Keywords
    X-ray diffraction; antiferromagnetic materials; barium compounds; calcination; crystal structure; ferromagnetic materials; ferromagnetic-paramagnetic transitions; magnetic hysteresis; magnetic transition temperature; manganese; metal-insulator transition; permittivity; remanence; transmission electron microscopy; 10H-type crystal structure; 2H-type perovskite; BaCoO3:Mn; SQUID measurements; X-ray diffraction; antiferromagnetic phase; calcination; dielectric constant; electric properties; ferromagnetic oxides; ferromagnetic-paramagnetic transition; four-probe technique; hysteresis; magnetic properties; magnetisation; magnetisation-temperature curves; mixed phases; remanent magnetization; semiconductor-insulator transition; structural properties; transition temperature; transmission electron microscopy; Antiferromagnetic materials; Dielectric measurements; Electric variables measurement; Magnetic force microscopy; Magnetic properties; SQUIDs; Temperature; Transmission electron microscopy; X-ray diffraction; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
  • Print_ISBN
    0-7803-9009-1
  • Type

    conf

  • DOI
    10.1109/INTMAG.2005.1464272
  • Filename
    1464272