DocumentCode :
3538788
Title :
In-situ observation study on nano constriction spacer NOL for CPPGMR by conductive AFM
Author :
Miyake, K. ; Izumi, M. ; Kawasaki, S. ; Doi, M. ; Sahashi, M.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
1697
Lastpage :
1698
Abstract :
This paper investigates in-situ characterization method for metallic path shapes and their distributions inside the nano-oxide layer (NOL) by using the conductive atomic force microscopy (AFM) and reports on the effect of the assist energy upon the formation of the metallic path inside Al-Cu NOL. Film stacks of Cu/Al are deposited on a thermally oxidized Si substrate by ECR ion beam sputtering. RHEED images reveal that further increasing the annealing temperature to more than 200°C, the disappearance of the clear rings from the Cu or the Al surfaces can be recognized due to the structural change by the alloying or segregation in both Al/Cu and Cu/Al bi-layer samples. Topographic images of the sample unoxidized with bias voltage of 0.5 V show round shape microstructures and there are both bright and dark areas in the electric current (conductive AFM) image where a bright one means apparently the shape of the metallic channels on the surface of the NOL. On the other hand, topographic images of samples annealed at 300°C before oxidation show a decrease in grain size and channel size.
Keywords :
alloying; aluminium; annealing; atomic force microscopy; copper; grain size; metallic thin films; oxidation; reflection high energy electron diffraction; segregation; sputtered coatings; surface topography; 0.5 V; 300 degC; Cu-Al; ECR ion beam sputtering; RHEED; Si; alloying; annealing; bias voltage; clear rings; conductive AFM; conductive atomic force microscopy; electric current image; film stacks; grain size; in-situ characterization method; metallic path shapes; nanoconstriction spacer NOL; nanooxide layer; oxidation; round shape microstructures; sample topographic images; segregation; thermally oxidized substrate; Annealing; Atomic force microscopy; Atomic layer deposition; Ion beams; Semiconductor films; Shape; Sputtering; Substrates; Surface topography; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464282
Filename :
1464282
Link To Document :
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