Title :
Free-space microwave measurement of permittivity of epitaxial layer semiconductor
Author :
Zaki, Fatimah Audah Md ; Awang, Zaiki ; Baba, Noor Hasimah ; Zoolfakar, Ahmad Sabirin ; Abu Bakar, Raudah ; Zolkapli, Maizatul ; Fadzlina, Nani
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. Mara, Shah Alam, Malaysia
Abstract :
A free-space method for the calculation of complex permittivity of epitaxial layer on doped and undoped substrates measured by a spot-focusing measurement system have been developed. The effective dielectric constants obtained were close to the published values. The method used was Metal-Backed Method, where S11 is measured. The samples are sandwiched between Teflon plate which is quarter wavelength at mid-band frequency and backed by a metal plate. Simulations of the measurement setup were carried out using Computer Simulation Technology (CST) and the effective dielectric constants are compared with measurements. Results are reported in the frequency range of 18-26 GHz.
Keywords :
microwave measurement; nondestructive testing; permittivity measurement; semiconductor epitaxial layers; Teflon plate; complex permittivity; computer simulation technology; dielectric constants; epitaxial layer semiconductor; free-space microwave measurement; frequency 18 GHz to 26 GHz; metal-backed method; spot-focusing measurement system; Adaptation models; Computational modeling; Frequency measurement; Integrated circuits; electromagnetic simulation; free-space measurement; microwave non-destructive testing; semiconductor dielectrics;
Conference_Titel :
RF and Microwave Conference (RFM), 2011 IEEE International
Conference_Location :
Seremban, Negeri Sembilan
Print_ISBN :
978-1-4577-1628-7
DOI :
10.1109/RFM.2011.6168698
