Free-space microwave measurement of permittivity of epitaxial layer semiconductor

Author

Zaki, Fatimah Audah Md ; Awang, Zaiki ; Baba, Noor Hasimah ; Zoolfakar, Ahmad Sabirin ; Abu Bakar, Raudah ; Zolkapli, Maizatul ; Fadzlina, Nani

Author_Institution

Fac. of Electr. Eng., Univ. Teknol. Mara, Shah Alam, Malaysia

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

71

Lastpage

74

Abstract

A free-space method for the calculation of complex permittivity of epitaxial layer on doped and undoped substrates measured by a spot-focusing measurement system have been developed. The effective dielectric constants obtained were close to the published values. The method used was Metal-Backed Method, where S₁₁ is measured. The samples are sandwiched between Teflon plate which is quarter wavelength at mid-band frequency and backed by a metal plate. Simulations of the measurement setup were carried out using Computer Simulation Technology (CST) and the effective dielectric constants are compared with measurements. Results are reported in the frequency range of 18-26 GHz.

Keywords

microwave measurement; nondestructive testing; permittivity measurement; semiconductor epitaxial layers; Teflon plate; complex permittivity; computer simulation technology; dielectric constants; epitaxial layer semiconductor; free-space microwave measurement; frequency 18 GHz to 26 GHz; metal-backed method; spot-focusing measurement system; Adaptation models; Computational modeling; Frequency measurement; Integrated circuits; electromagnetic simulation; free-space measurement; microwave non-destructive testing; semiconductor dielectrics;

fLanguage

English

Publisher

ieee

Conference_Titel

RF and Microwave Conference (RFM), 2011 IEEE International

Conference_Location

Seremban, Negeri Sembilan

Print_ISBN

978-1-4577-1628-7

Type

conf

DOI

10.1109/RFM.2011.6168698

Filename

6168698