Title :
A free-space method for S-parameter measurement of semiconductor materials at microwave frequencies
Author :
Zaki, Fatimah´Audah Md ; Awang, Zaiki ; Baba, Noor Hasimah ; Zoolfakar, Ahmad Sabirin ; Abu Bakar, Raudah ; Zolkapli, Maizatul ; Fadzlina, Nani
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. Mara, Shah Alam, Malaysia
Abstract :
Four silicon dioxide samples with different oxide layer thicknesses have been prepared in the lab. These samples were measured using spot-focusing free-space measurement system employing metal-backed method where S11 is measured. The result shows that the measurement system could differentiate the epitaxial layer thicknesses of the oxides. Further analysis shows that this measurement technique is sensitive to the properties of the epitaxial layer only. Results are reported in the frequency range of 18-26 GHz.
Keywords :
S-parameters; epitaxial layers; semiconductor materials; silicon compounds; S-parameter measurement; SiO2; epitaxial layer thickness; frequency 18 GHz to 26 GHz; metal-backed method; microwave frequency; oxide layer thickness; semiconductor materials; silicon dioxide; spot-focusing free-space measurement; Conductivity measurement; Frequency measurement; Logic gates; Microwave measurements; Silicon; Silicon compounds; Spirals; free-space measurement; metal-backed method; microwave non-destructive testing; oxide thickness;
Conference_Titel :
RF and Microwave Conference (RFM), 2011 IEEE International
Conference_Location :
Seremban, Negeri Sembilan
Print_ISBN :
978-1-4577-1628-7
DOI :
10.1109/RFM.2011.6168699
