A free-space method for S-parameter measurement of semiconductor materials at microwave frequencies

Author

Zaki, Fatimah´Audah Md ; Awang, Zaiki ; Baba, Noor Hasimah ; Zoolfakar, Ahmad Sabirin ; Abu Bakar, Raudah ; Zolkapli, Maizatul ; Fadzlina, Nani

Author_Institution

Fac. of Electr. Eng., Univ. Teknol. Mara, Shah Alam, Malaysia

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

75

Lastpage

78

Abstract

Four silicon dioxide samples with different oxide layer thicknesses have been prepared in the lab. These samples were measured using spot-focusing free-space measurement system employing metal-backed method where S₁₁ is measured. The result shows that the measurement system could differentiate the epitaxial layer thicknesses of the oxides. Further analysis shows that this measurement technique is sensitive to the properties of the epitaxial layer only. Results are reported in the frequency range of 18-26 GHz.

Keywords

S-parameters; epitaxial layers; semiconductor materials; silicon compounds; S-parameter measurement; SiO₂; epitaxial layer thickness; frequency 18 GHz to 26 GHz; metal-backed method; microwave frequency; oxide layer thickness; semiconductor materials; silicon dioxide; spot-focusing free-space measurement; Conductivity measurement; Frequency measurement; Logic gates; Microwave measurements; Silicon; Silicon compounds; Spirals; free-space measurement; metal-backed method; microwave non-destructive testing; oxide thickness;

fLanguage

English

Publisher

ieee

Conference_Titel

RF and Microwave Conference (RFM), 2011 IEEE International

Conference_Location

Seremban, Negeri Sembilan

Print_ISBN

978-1-4577-1628-7

Type

conf

DOI

10.1109/RFM.2011.6168699

Filename

6168699