Title :
Effect of band structure modification on the internal losses of 1.3-/spl mu/m InGaAsP lasers
Author :
Patel, D. ; Pikal, J.M. ; Menoni, C.S.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
Summary form only given. We report the results of amplified spontaneous emission (ASE) measurements in 1.3-/spl mu/m buried heterostructure InGaAsP semiconductor lasers as a function of pressure from which the variation of the optical losses with the associated band structure changes was determined. These results showed that the optical losses decreased by 20% when the bandgap increased by 12%.
Keywords :
III-V semiconductors; band structure; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical losses; semiconductor lasers; superradiance; 1.3 mum; ASE measurements; InGaAsP; InGaAsP lasers; amplified spontaneous emission; band structure changes; band structure modification; bandgap; buried heterostructure InGaAsP semiconductor lasers; internal losses; optical losses; Laser modes; Laser transitions; Mirrors; Optical losses; Optical materials; Photonic band gap; Position measurement; Predictive models; Tunable circuits and devices; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676107
