A tunneling FET exploiting in various structures and different models: A review

Author

Usha, C. ; Vimala, P.

Author_Institution

Dept. of ECE, Dayananda Sagar Coll. of Eng., Bangalore, India

fYear

2015

fDate

19-20 March 2015

Firstpage

1

Lastpage

6

Abstract

A great obstacle for ultra low MOSFETs functioning at very low voltages is there physical limit of the inversion subthreshold swing of 60mv/dec at 300K. Quantum mechanical tunneling of carriers from the source into the channel in Tunnel FETs (TFETs) overcomes in principle this hurdle. The rapid forthcoming of research regarding the TFET leads to a wide range of studied device geometries, different heterostructure combinations and applied technological methods. In this review paper, we discuss about the working principle of TFETs and we focus on various structures and different analytical models available for TFETs.

Keywords

MOSFET; semiconductor quantum wells; tunnelling; carrier tunneling; inversion subthreshold swing; quantum mechanical tunneling; temperature 300 K; tunneling FET; tunnelng FET; ultralow MOSFET; Analytical models; Electric potential; Logic gates; MOSFET; Mathematical model; Tunneling; Analytical Models; Band to Band Tunneling (BTBT); Short Channel Effects (SCEs); Tunnel FETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Innovations in Information, Embedded and Communication Systems (ICIIECS), 2015 International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4799-6817-6

Type

conf

DOI

10.1109/ICIIECS.2015.7192878

Filename

7192878