Title :
Full-bridged MOSFET DC-to-RF inverter for high frequency ultrasonic transducer at 3 MHz
Author :
Suzuki, Taiju ; Ikeda, Hiroaki ; Mizutani, Yoko ; Nakabori, T. ; Ichioka, Yoshiyuki ; Yoshida, Hirofbmi ; Honda, Keisuke ; Miyamoto, Toshiaki ; Sano, Shuichi
Author_Institution :
Shizuoka Univ., Hamamatsu, Japan
Abstract :
Described is a full-bridged MOSFET DC-to-RF inverter operating at a frequency of 3 MHz for driving a high frequency ultrasonic transducer for cleaning material surfaces. The full-bridged MOSFET DC-to-RF inverter generates an RF power of 60 W with a power conversion efficiency of 79 to 87% at 3 MHz when an ultrasonic transducer with a very low impedance in the order of 1 to 5 ohms is connected to the inverter. The ultrasonic transducer was satisfactorily operated when the ultrasonic transducer was driven from the full-bridged MOSFET DC-to-RF inverter
Keywords :
DC-AC power convertors; bridge circuits; invertors; power MOSFET; ultrasonic cleaning; ultrasonic transducers; 3 MHz; 60 W; 79 to 87 percent; full-bridged MOSFET DC-to-RF inverter; high frequency ultrasonic transducer; inverters; load impedance; material surfaces cleaning; power conversion efficiency; very low impedance; Assembly; Circuits; Cleaning; Inverters; Power generation; Radio frequency; Resonant frequency; Semiconductor materials; Surface impedance; Ultrasonic transducers;
Conference_Titel :
Industrial Electronics, 1995. ISIE '95., Proceedings of the IEEE International Symposium on
Conference_Location :
Athens
Print_ISBN :
0-7803-7369-3
DOI :
10.1109/ISIE.1995.496632
