GMR and magnetodynamics of MnIr spin valves depending on growth order of FM and AFM layers

The influence of spin valve layers on its main properties was investigated. Giant magnetoresistance and domain structures of two types of spin valves, Si/5 nm Ta/3 nm Co/2.5 nm Cu/3 nm Co/ 10 nm Ir₂₀Mn₈₀/5 nm Ta top spin valve (TSV) and Si/5 nm Ta/3 nm/10 nm Ir₂₀Mn₈₀/ Co/2.5 nm Cu/3 nm Co/5 nm Ta bottom spin valve (BSV), were studied experimentally. The samples were fabricated by dc magnetron sputter deposition on Si substrates. The magnetic properties (magnetic anisotropy, magnetization reversal, magnetic structure) and magnetoresistance of the spin valves were measured using vibrating sample magnetometer and four-point probe respectively.