DocumentCode :
3539450
Title :
Analysis of current spreading in long-wavelength, vertical-cavity, surface-emitting lasers
Author :
Yanyan Xiong ; Yu-Hwa Lo
Author_Institution :
Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fYear :
1998
fDate :
3-8 May 1998
Firstpage :
241
Lastpage :
242
Abstract :
Summary form only given. Current spreading is a major concern for wafer-bonded 1.3-/spl mu/m and 1.55-/spl mu/m vertical-cavity, surface-emitting lasers (VCSELs) because the distance between the active layer and the aperture for wafer-bonded VCSELs is significantly greater than that for shorter wavelength VCSELs. The current spreading problem becomes even more severe for VCSELs with dielectric top mirrors due to carrier injection from the peripheral region of the aperture, as opposed to direct carrier injection to the aperture through the semiconductor Bragg mirror. We have numerically analyzed the current spreading problem for four popular 1.3-/spl mu/m and 1.55-/spl mu/m VCSEL structures. Two structures have n-GaAs/AlGaAs Bragg mirrors, with oxygen implantation and selective AlGaAs oxidation for current confinement, respectively. The other two structures have p-GaAs/AlGaAs Bragg mirrors, with similar current confinement structures. Common to all four devices are their wafer-bonded GaAs/AlGaAs mirrors and top dielectric mirrors.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; carrier mobility; gallium arsenide; laser cavity resonators; laser theory; semiconductor device models; semiconductor lasers; surface emitting lasers; 1.3 micron; 1.55 micron; Boltzmann statistics; GaAs-AlGaAs; Poisson´s equation; carrier distribution model; carrier injection; current confinement; current spreading; dielectric top mirrors; long-wavelength VCSEL; low-field mobility model; n-GaAs/AlGaAs Bragg mirrors; p-GaAs/AlGaAs Bragg mirrors; selective AlGaAs oxidation; wafer-bonded VCSEL; Apertures; Face detection; Laser modes; Optical arrays; Optical waveguides; Stimulated emission; Surface emitting lasers; Temperature distribution; Vertical cavity surface emitting lasers; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
Type :
conf
DOI :
10.1109/CLEO.1998.676113
Filename :
676113
Link To Document :
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