Magnetic properties of transition metal atoms doped in silicon nanotubes with hexagonal prism structure

Author

Jang, Y.-R. ; Jo, Chulsu ; Lee, J.I.

Author_Institution

Dept. of Phys., Incheon Univ., South Korea

fYear

2005

fDate

4-8 April 2005

Firstpage

1855

Lastpage

1856

Abstract

Magnetic properties of doped magnetic transition metals in the infinite Si nanotubes with hexagonal prism structure (Si₁₂M_n, M=Fe, Co Ni, n= 1, 2) for two different number of dopants were investigated using the localized basis calculational method. Equilibrium stacking distance was determined for undoped sample by calculating the total energy as a function of distance. Number of electrons for each spin, sum of electrons, amount of charge transfer and magnetic moments were also obtained and summarized for the doped samples.

Keywords

cobalt; elemental semiconductors; ferromagnetic materials; iron; magnetic moments; nanotubes; nickel; silicon; Si₁₂Co; Si₁₂Co₂; Si₁₂Fe; Si₁₂Fe₂; Si₁₂Ni; Si₁₂Ni₂; charge transfer; dopants; electron number; equilibrium stacking distance; hexagonal prism structure; localized basis calculational method; magnetic moments; magnetic properties; nanotubes; total energy; transition metal atoms; Charge transfer; Electrons; Geometry; Magnetic devices; Magnetic moments; Magnetic properties; Physics; Semiconductor device doping; Semiconductor nanotubes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1464361

Filename

1464361