Title :
Heusler materials in magnetic tunnel junctions
Author :
Reiss, G. ; Schmalhorst, J. ; Bruckl, H. ; Hütten, A. ; Kämmerer, S.
Author_Institution :
Dept. of Phys., Bielefeld Univ., Germany
Abstract :
Magnetic tunnelling junctions (MTJ) were prepared by magnetron sputtering on thermally oxidized Si (100) wafers at room temperature. Two different half MTJ were grown: V/Co2MnSi/Al with plasma oxidation and in situ annealing and the same stack with natural oxidation only. Transport properties like tunnelling magnetoresistance, and X-ray absorption spectra of the two samples were obtained. In the investigated samples, the measured shape of the Mn-L2,3 edges of plasma oxidized sample resulted from the superposition of a signal from MnOx and a signal from unoxidized Mn in Heusler alloy.
Keywords :
X-ray absorption spectra; aluminium; annealing; cobalt alloys; ferromagnetic materials; manganese alloys; oxidation; plasma materials processing; silicon alloys; sputter deposition; tunnelling magnetoresistance; vanadium; 293 to 298 K; Heusler alloy; Si; V-Co2MnSi-Al; X-ray absorption spectra; in situ annealing; magnetic tunnel junctions; magnetron sputtering; natural oxidation; plasma oxidation; room temperature; thermally oxidized; transport properties; tunnelling magnetoresistance; Magnetic materials; Magnetic tunneling; Oxidation; Plasma measurements; Plasma properties; Plasma temperature; Plasma transport processes; Plasma x-ray sources; Shape measurement; Sputtering;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1464367
