• DocumentCode
    3539584
  • Title

    XPS and XMCD study of Fe3O4/GaAs interface

  • Author

    Lu, Y.X. ; Claydon, J.S. ; Ahmad, E. ; Xu, Y.B. ; Thompson, S.M. ; Wilson, K.

  • Author_Institution
    Spintronics Laboratory, York Univ., UK
  • fYear
    2005
  • fDate
    4-8 April 2005
  • Firstpage
    1877
  • Lastpage
    1878
  • Abstract
    Surface and interface of Fe oxide/GaAs(100) hybrid structure were characterized using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD). Series of samples were prepared by post-growth oxidation. The thickness dependences of the interface magnetic properties and chemical composition were also investigated.
  • Keywords
    III-V semiconductors; X-ray absorption spectra; X-ray photoelectron spectra; chemical analysis; ferromagnetic materials; gallium arsenide; interface magnetism; interface structure; iron compounds; magnetic circular dichroism; oxidation; semiconductor-metal boundaries; Fe3O4-GaAs; X-ray absorption spectroscopy; X-ray magnetic circular dichroism; X-ray photoelectron spectroscopy; chemical composition; hybrid structure; interface magnetic properties; post-growth oxidation; Absorption; Chemicals; Distortion measurement; Gallium arsenide; Geometry; Insulation; Iron; Phase measurement; Thickness measurement; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
  • Print_ISBN
    0-7803-9009-1
  • Type

    conf

  • DOI
    10.1109/INTMAG.2005.1464372
  • Filename
    1464372
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3539584