DocumentCode :
3539584
Title :
XPS and XMCD study of Fe3O4/GaAs interface
Author :
Lu, Y.X. ; Claydon, J.S. ; Ahmad, E. ; Xu, Y.B. ; Thompson, S.M. ; Wilson, K.
Author_Institution :
Spintronics Laboratory, York Univ., UK
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
1877
Lastpage :
1878
Abstract :
Surface and interface of Fe oxide/GaAs(100) hybrid structure were characterized using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD). Series of samples were prepared by post-growth oxidation. The thickness dependences of the interface magnetic properties and chemical composition were also investigated.
Keywords :
III-V semiconductors; X-ray absorption spectra; X-ray photoelectron spectra; chemical analysis; ferromagnetic materials; gallium arsenide; interface magnetism; interface structure; iron compounds; magnetic circular dichroism; oxidation; semiconductor-metal boundaries; Fe3O4-GaAs; X-ray absorption spectroscopy; X-ray magnetic circular dichroism; X-ray photoelectron spectroscopy; chemical composition; hybrid structure; interface magnetic properties; post-growth oxidation; Absorption; Chemicals; Distortion measurement; Gallium arsenide; Geometry; Insulation; Iron; Phase measurement; Thickness measurement; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464372
Filename :
1464372
Link To Document :
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