DocumentCode :
3539703
Title :
OMVPE Growth of AIP/GaP Superlattices Using Tertiarybutylphosphine as a Phosphorus Source
Author :
Wakahara, Akihiro ; Wang, Xue-Lun ; Sasaki, Akio
Author_Institution :
Department of Electrical Engineering, Kyoto University, Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
189
Lastpage :
190
Keywords :
Crystallization; Epitaxial growth; Semiconductor materials; Semiconductor superlattices; Substrates; Surface cleaning; Surface morphology; Surface treatment; Temperature; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.703848
Filename :
703848
Link To Document :
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