DocumentCode :
3539780
Title :
MOVPE Growth of lnGaAsP using TBA and TBP with Extremely Low V/Ill Ratio
Author :
Horita, M. ; Suzuki, M. ; Matsushima, Y.
Author_Institution :
KDD R&D Laboratories, Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
191
Lastpage :
192
Keywords :
Controllability; Crystallization; Electron mobility; Epitaxial growth; Epitaxial layers; Gold; Indium phosphide; Photoluminescence; Safety; Solids;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.703849
Filename :
703849
Link To Document :
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