DocumentCode
3539973
Title
A low-threshold and polarization-controlled vertical-cavity, surface-emitting laser grown on GaAs (311)B substrate by MOCVD
Author
Mizutani, A. ; Hatori, Nobuaki ; Nishiyama, N. ; Koyama, F. ; Iga, K.
Author_Institution
Tokyo Inst. of Technol., Yokohama, Japan
fYear
1998
fDate
3-8 May 1998
Firstpage
246
Lastpage
247
Abstract
Summary form only given. We realized a low-threshold current (600 /spl mu/A) and polarization-controlled InGaAs QW DBR vertical-cavity surface-emitting laser (VCSEL) on a GaAs (311)B substrate by metalorganic chemical-vapor deposition (MOCVD).
Keywords
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; light polarisation; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 600 muA; GaAs; GaAs (311)B substrate; InGaAs; InGaAs QW DBR VCSEL laser; MOCVD epitaxial growth; low-threshold; metalorganic chemical-vapor deposition; polarization-controlled; vertical-cavity surface-emitting laser; Dynamic range; Frequency; Gallium arsenide; Noise measurement; Optical noise; Optical receivers; Polarization; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-339-0
Type
conf
DOI
10.1109/CLEO.1998.676119
Filename
676119
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