High density magnetic random access memory using a pair of asymmetrical cell

Magnetic random access memory (MRAM) is one of the most promising candidates to provide energy efficient and non-volatile memory. We present a new MRAM design using a pair of asymmetrical cells. The pair cells have parallelogram shaped to induce broken shape magnetic anisotropy along the short axis of the cell. One important advantage of the pair cells is that they can share the same Word and Bit lines intersection in the MRAM architecture. This means that the number of electrical current lines can be reduced and leading to higher recording density. The new concept is successfully demonstrated using finite element micromagnetic simulation.