DocumentCode
3540064
Title
1.05 W from the mostly diffraction-limited 1.55-/spl mu/m InGaAsP/InP-tapered laser
Author
Cho, SeongHwan ; Fox, S. ; Vusirikala, V. ; Johnson, F.G. ; Stone, D. ; Dagenais, Mario
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fYear
1998
fDate
3-8 May 1998
Firstpage
247
Abstract
Summary form only given. We have demonstrated 1.05 W of diffraction-limited power from a tapered unstable InGaAsP-InP ridge waveguide semiconductor laser resonator with 80% of the power in the central lobe at 1.55 /spl mu/m.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser stability; laser transitions; light diffraction; ridge waveguides; semiconductor lasers; waveguide lasers; 1.05 W; 1.55 mum; InGaAsP-InP; InGaAsP-InP ridge waveguide semiconductor laser; InGaAsP/InP-tapered laser; central lobe; diffraction-limited power; laser resonator; mostly diffraction-limited; mostly diffraction-limited 1.55-/spl mu/m InGaAsP/InP-tapered laser; Diffraction; Educational institutions; Electrons; Joining materials; Mars; Photonics; Power amplifiers; Power lasers; Semiconductor lasers; Semiconductor optical amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-339-0
Type
conf
DOI
10.1109/CLEO.1998.676120
Filename
676120
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