Title :
Single-power-supply-based transformerless IGBT/MOSFET gate driver with 100% high-side turn-on duty cycle operation performance using auxiliary bootstrapped charge pumper
Author :
Lin, Ray L. ; Lee, Fred C.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
Using an invented auxiliary bootstrapped charge pumper, a smart new design of single-power-supply-based transformerless IGBT/MOSFET gate driver with 100% high-side turn-on duty cycle operation performance is proposed in this paper. The experimental results of the proposed circuit have been obtained to verify the power sourcing performance of the invented transformerless auxiliary bootstrapped charge pumper for the high-side driving circuit of the single-level two-switch half-bridge using the same single power supply of the low-side driving circuit. Also, with the help of the invented auxiliary bootstrapped charge pumper, the application of the single-level two-switch half-bridge can be extended to the applications of multi-level multi-switch half-bridges
Keywords :
bridge circuits; driver circuits; field effect transistor switches; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power field effect transistors; power semiconductor switches; power supplies to apparatus; switching circuits; auxiliary bootstrapped charge pumper; high-side driving circuit; high-side turn-on duty cycle operation; low-side driving circuit; multi-level multi-switch half-bridges; power sourcing performance; power-supply; single-level two-switch half-bridge; transformerless IGBT/MOSFET gate driver; Charge pumps; Driver circuits; Electrical equipment industry; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power supplies; Stress; Switches; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE
Conference_Location :
St. Louis, MO
Print_ISBN :
0-7803-3840-5
DOI :
10.1109/PESC.1997.616904