DocumentCode :
3540107
Title :
Spin filter type magnetic tunnel junction using EuO ferromagnetic barrier
Author :
Matsumoto, T. ; Kawaguchi, K. ; Koshizaki, N. ; Kashiwaya, S. ; Tani, K. ; Yamaguchi, K. ; Yamada, K.
Author_Institution :
Dept. of Material Sci., Saitama Univ., Japan
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
2001
Lastpage :
2002
Abstract :
The purpose of this study is to prepare high quality spin filter type MTJ (SFMTJ) and investigate the possibilities of TMR and spintronics devices. Europium monoxide (EuO), a ferromagnetic semiconductor, is considered as a good barrier material for a trial study of SFMTJ. The magnetic properties of the EuO nanolayers is, first, investigated to employ them as ferromagnetic barriers. Observed magnetization saturation and coercivity confirm the ferromagnetic properties of the material and indicate compound formation at the interfaces.
Keywords :
coercive force; europium compounds; ferromagnetic materials; magnetic semiconductors; tunnelling magnetoresistance; EuO; MTJ; TMR; coercivity; europium monoxide; ferromagnetic barrier; ferromagnetic semiconductor; magnetization saturation; nanolayers; spin filter type magnetic tunnel junction; spintronics devices; Electrodes; Electrons; Filters; Magnetic separation; Magnetic tunneling; Magnetoelectronics; Niobium; Optical polarization; Spectroscopy; Tunneling magnetoresistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464439
Filename :
1464439
Link To Document :
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