Title :
Dielectric tunnel charge transport characteristics of MTJ for MRAM application
Author :
Li, Simon C. ; Lee, J.M. ; Shu, M.F. ; Su, J.P. ; Wu, Te-Ho
Author_Institution :
Taiwan SPIN Res. Center, Nat. Yunlin Univ. of Sci. & Technol., Taiwan
Abstract :
This study investigates the analytical model for a dielectric tunnel capacitance and tunnel resistance of the thin insulating layer in a magnetic tunnel junction consisting of Si/SiO2/Ta 50 Å/Cu 200 Å/Ta 50 Å/Ni-Fe 20 Å/Cu 50 Å/Mn75Ir25 100 Å/Co70Fe30 40 Å/Al2O3 15 Å/Co70Fe30 40 Å/Ni-Fe 200 Å/Ta 500 Å. The dielectric tunnel relaxation time reaches a climax in the vicinity prior to positive and negative tunneling, then declines during the tunneling. MR ratio also decreases with increasing applied voltage close to the tunneling.
Keywords :
aluminium compounds; capacitance; cobalt alloys; copper; dielectric materials; dielectric relaxation; iridium alloys; iron alloys; leakage currents; manganese alloys; nickel alloys; tantalum; tunnelling magnetoresistance; 100 angstrom; 15 angstrom; 20 angstrom; 200 angstrom; 40 angstrom; 50 angstrom; 500 angstrom; MRAM; MTJ; Si-SiO2-Ta-Cu-Ta-NiFe-Cu-Mn75Ir25-Co70Fe30-Al2O3-Co70Fe30-NiFe-Ta; dielectric tunnel capacitance; dielectric tunnel charge transport; magnetic tunnel junction; negative tunneling; thin insulating layer; tunnel resistance; Atomic force microscopy; Capacitance; Capacitors; Current measurement; Dielectric measurements; Dielectrics and electrical insulation; Electrical resistance measurement; Magnetic tunneling; Polynomials; Voltage;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1464444
