DocumentCode :
3540160
Title :
Study of the relationship between scalability of MTJ and switching field using SPM
Author :
Moses, A. Fervin ; Park, Seungbae ; Heo, Jinhee ; Kim, Tacwan ; Ilsub Chung
Author_Institution :
Sch. of Inf. & Commun. Eng., Sung Kyun Kwan Univ., Suwon, South Korea
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
2015
Lastpage :
2016
Abstract :
The switching field variation in terms of the sizes of sub-micron MTJ cells was studied by measuring the I-V characteristics of MTJ cells and hysteresis I-H loop, obtained by measuring the tunneling current with sweeping magnetic field. The observed switching field using SPM was compared to the results obtained through conventional methods. The measured currents with respect to applied magnetic fields reveal hysteretic behavior with two stable states. It was also observed that the switching field of MTJ cell increase as the size of MTJ cell decreases due to the depolarization.
Keywords :
magnetic hysteresis; magnetic switching; tunnelling magnetoresistance; I-V characteristics; MTJ; SPM; depolarization; hysteresis I-H loop; sweeping magnetic field; switching field; tunneling current; Current measurement; Electrical resistance measurement; Magnetic field measurement; Magnetic hysteresis; Magnetic switching; Magnetic tunneling; Scalability; Scanning probe microscopy; Size measurement; Surface resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464446
Filename :
1464446
Link To Document :
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