Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB

Author

Hwang, Jae Youn ; Kim, Soon Sub ; Rhee, Jang Rob ; Chun, Byong Sun ; You, Sang, II ; Byung Seok, Oh. ; Kim, Young Keun ; Kim, Taewan ; Park, Wanjun, II

Author_Institution

Dept. of Phys., Sookmyung Women´´s Univ., Seoul, South Korea

fYear

2005

fDate

4-8 April 2005

Firstpage

2021

Lastpage

2022

Abstract

MTJs with the synthetic antiferromagnetic (SAF) free layer consisting of CoFeSiB/Ru/CoFeSiB were prepared because a SAF structure can reduce the magnetostatic coupling. Magnetic switching and tunneling magnetoresistance (TMR) ratio of MTJs were investigated by experiment and by simulation. SAF structures show lower TMR ratio and coercivity (H_c) than single free layer due to low net magnetic moment. The CoFeSiB SAF structure was found to have lower exchange energy.

Keywords

amorphous magnetic materials; antiferromagnetic materials; boron alloys; cobalt alloys; coercive force; iron alloys; magnetic moments; magnetic switching; ruthenium; silicon alloys; tunnelling magnetoresistance; CoFeSiB-Ru-CoFeSiB; TMR; coercivity; exchange energy; magnetic moment; magnetization switching; magnetostatic coupling; synthetic antiferromagnet free layers; tunneling magnetoresistance; Amorphous magnetic materials; Amorphous materials; Antiferromagnetic materials; Coercive force; Couplings; Magnetic switching; Magnetic tunneling; Magnetization; Magnetostatics; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1464449

Filename

1464449