Title :
Switching characteristics in magnetic tunnel junctions with a synthetic antiferromagentic free layer
Author :
Yun Ki Lee ; Young Keun Kim ; Taewan Kim ; Wanjun Park ; Injun Hwang ; Won-Cheol Jeong ; Jangeun Lee
Author_Institution :
Div. of Mater. Sci. & Eng., Korea Univ., Seoul
Abstract :
The properties of sub-micrometer scaled MTJs using various synthetic antiferromagnetic (SAF) free layer were studied using remanent-state measurement. The magnetic tunnel junction device was a structure consisted of TiN/PtMn/CoFe/Ru/CoFe/AlO/NiFe/Ru/NiFe/Ta. It was found that junctions using single free layer showed complex switching behaviors with larger switching field variation while the junction using a specific SAF free layer exhibited kink-free R-H curves with less switching field variation. MR ratio and magnetization moment of the MTJ were also measured
Keywords :
aluminium compounds; antiferromagnetic materials; cobalt alloys; iron alloys; magnetic moments; magnetic switching; manganese alloys; platinum alloys; remanence; ruthenium; tantalum; titanium compounds; tunnelling magnetoresistance; MR ratio; MTJ; R-H curves; TiN-PtMn-CoFe-Ru-CoFe-AlO-NiFe-Ru-NiFe-Ta; magnetic tunnel junctions; magnetization moment; remanent-state measurement; single free layer; switching field variation; synthetic antiferromagnetic free layer; Antiferromagnetic materials; Couplings; Magnetic domain walls; Magnetic domains; Magnetic field measurement; Magnetic switching; Magnetic tunneling; Magnetization; Magnetostatics; Materials science and technology;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Conference_Location :
Nagoya
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1464451
