DocumentCode :
3540243
Title :
Magnetization reversal in exchange biased multilayers detected by giant magnetoresistance effects
Author :
Guo, Z.B. ; Li, K.B. ; Qiu, J.J. ; Han, G.C. ; Zheng, Y.K. ; Luo, Pei-Wen ; An, L.H. ; Wu, Y.H.
Author_Institution :
Data Storage Inst., Nat. Univ. of Singapore, Singapore
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
2035
Lastpage :
2036
Abstract :
A structure of exchange biased FM1/AFM1/FM2/AFM2 multilayers is proposed and giant magnetoresistance effect is used as a probe of magnetization reversal. A spin valve structure of NiFe (2 nm)/CoFe (1 nm)/Cu (2.2 nm)/NiFe (12 nm/IrMn (3 nm)/NiFe (6 nm)/IrMn (12 nm) is fabricated to investigate the magnetization reversal in NiFe (12 nm)/IrMn (3 nm)/NiFe (6 nm)/IrMn (12 nm) multilayers. In the decreasing field process, magnetization reversal can well be understood by the reversal of magnetization due to decreasing magnetization and increasing resistance. In the Increasing field process, magnetization and resistance increase sharply at the field around -20 Oe. Hysteresis loop of the sample are also investigated.
Keywords :
antiferromagnetic materials; cobalt alloys; copper; exchange interactions (electron); ferromagnetic materials; giant magnetoresistance; iridium alloys; iron alloys; magnetic hysteresis; magnetic multilayers; magnetisation reversal; manganese alloys; nickel alloys; spin valves; 1 nm; 12 nm; 2 nm; 2.2 nm; 3 nm; 6 nm; NiFe-CoFe-Cu-NiFe-IrMn-NiFe-IrMn; NiFe-IrMn-NiFe-IrMn; exchange biased multilayers; giant magnetoresistance effects; hysteresis loop; magnetization reversal; spin valve; Electrical resistance measurement; Giant magnetoresistance; Magnetic field measurement; Magnetic fields; Magnetic hysteresis; Magnetic multilayers; Magnetization reversal; Spin valves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464456
Filename :
1464456
Link To Document :
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